Publication | Closed Access
Improved performance of semi-polar (11-22) GaN-based light-emitting diodes grown on SiNx interlayer
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Citations
25
References
2012
Year
Wide-bandgap SemiconductorElectrical EngineeringSolid-state LightingEngineeringApplied PhysicsAluminum Gallium NitrideGan Power DeviceGan-based Light-emitting DiodesSinx InterlayerCategoryiii-v SemiconductorOptoelectronics
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