NiSi2-Si infrared Schottky photodetectors grown by molecular beam epitaxy

Abstract

We report the first infrared sensitive (λ≳1 μm) Schottky photodetector using nickel disilicide (NiSi2) grown expitaxially on a silicon substrate by molecular beam expitaxy. Measurements utilizing the 1.32-μm line of a neodymium yttrium aluminum garnet (Nd:YAG) laser indicate a barrier height of 0.64 eV and a quantum efficiency of 0.22%. The use of silicon technology has the potential of integrating the detector with electronics on a monolithic chip of silicon. Such systems are attractive for optical communication applications in the 1.3-μm wavelength region.