Optical heating in semiconductors: Laser damage in Ge, Si, InSb, and GaAs

Abstract

A comprehensive theory developed previously for optical heating in semiconductors is applied to the calculation of laser damage thresholds in Ge, Si, InSb, and GaAs. The calculated thresholds agree well with the experimental values over a broad range of laser wavelengths and pulse durations. The results demonstrate that the dynamic nature of the material’s optical and transport properties with changing temperature and laser-generated carrier density has a significant effect on the heating process, particularly at short pulse durations.