Publication | Closed Access
CuInSe<sub>2</sub> Quantum Dot Solar Cells with High Open-Circuit Voltage
144
Citations
37
References
2013
Year
Midgap TrappingEngineeringHigh Open-circuit VoltageColloidal NanocrystalsPhotovoltaic DevicesPlasmon-enhanced PhotovoltaicsChemistryPhotovoltaicsSemiconductor NanostructuresSemiconductorsIi-vi SemiconductorSolar Cell StructuresQuantum DotsCompound SemiconductorMaterials ScienceNanotechnologySecondary Phosphine SelenideNanomaterialsApplied PhysicsOptoelectronicsSolar Cell Materials
CuInSe2 (CISe) quantum dots (QDs) were synthesized with tunable size from less than 2 to 7 nm diameter. Nanocrystals were made using a secondary phosphine selenide as the Se source, which, compared to tertiary phosphine selenide precursors, was found to provide higher product yields and smaller nanocrystals that elicit quantum confinement with a size-dependent optical gap. Photovoltaic devices fabricated from spray-cast CISe QD films exhibited large, size-dependent, open-circuit voltages, up to 849 mV for absorber films with a 1.46 eV optical gap, suggesting that midgap trapping does not dominate the performance of these CISe QD solar cells.
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