Publication | Closed Access
Topology of Electronic Charge Density and Energetics of Planar Faults in fcc Metals
100
Citations
18
References
2002
Year
EngineeringDefect ToleranceElectronic StructureFcc MetalsCharge DensityQuantum MaterialsUnstable Stacking ConfigurationCps CorrelatesMaterials SciencePhysicsMetallurgical InteractionAtomic PhysicsDefect FormationQuantum ChemistryElectrical PropertyElemental MetalAb-initio MethodElectronic Charge DensityNatural SciencesPlanar FaultsApplied PhysicsCondensed Matter PhysicsElectrical Insulation
Using ab initio calculations we have studied the energetics and the evolution of the electronic charge density with shear in three fcc metals exhibiting different deformation properties, aluminum, silver, and iridium. The charge redistribution described by the change in character of specific charge density critical points (cps), is ascertained from the values of the charge density, rho(0), and its three principal curvatures, rho( parallel parallel), rho(hh), and rho(vv), respectively. The change in character of cps correlates with the energetics. For all three metals, rho(hh) vanishes near the unstable stacking configuration. The symmetry or asymmetry of the charge redistribution, measured by rho(hh)/rho(vv), may be an important factor determining stacking fault energies.
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