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Physical properties of Al<i>x</i>In1−<i>x</i>N thin film alloys sputtered at low temperature
19
Citations
43
References
2014
Year
Aluminium NitrideIndium InsetsThin Film PhysicsOptical MaterialsEngineeringThin Film Process TechnologyChemical DepositionPhysical PropertiesLow TemperatureThin Film ProcessingMaterials ScienceMaterials EngineeringPhysicsHigh Temperature MaterialsNatural SciencesSurface ScienceCondensed Matter PhysicsApplied PhysicsThin Film DevicesThin FilmsAlloy PhaseChemical Vapor DepositionAlxin1−xn Thin Layers
In this paper, we report on the structural, optical, and electrical properties of a wide compositional range of AlxIn1−xN thin layers deposited on glass and polyethylene terephthalate substrates. AlxIn1−xN layers of controlled composition were obtained by a simple reactive magnetron co-sputtering protocol, using a single aluminium target with indium insets, by varying the Al/In target surface area ratio, and the composition of the deposition atmosphere. The relevant physical properties were investigated and discussed. It is shown that the texture of the thin films is dependent on the cation ratio, while the bowing parameters of lattice constants and band gap values are larger than those of epitaxial layers.
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