Lattice-matched Sc1−<i>x</i>Er<i>x</i>As/GaAs heterostructures: A demonstration of new systems for fabricating lattice-matched metallic compounds to semiconductors

Abstract

Successful growth of lattice-matched Sc1−xErxAs layers buried in GaAs with a room-temperature resistivity of ∼50 μΩ cm demonstrates the feasibility of fabricating heterostructures of lattice-matched rare-earth monopnictides and monochalcogenides in semiconductors. Reflection high-energy electron diffraction oscillations during ScAs, ErAs, and Sc1−xErxAs growth indicate monolayer-by-monolayer growth.