High‐Mobility Ambipolar Transport in Organic Light‐Emitting Transistors

Abstract

Organic light-emitting transistors based on bilayered structures (see figure) exhibit balanced ambipolar transport and mobility values as large as 3 × 10–2 cm2 V–1 s–1. The best performances are realized by sequentially depositing α,ω-dihexyl-quaterthiophene (DH4T) as p-type and N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13) as n-type materials. Laser-scanning confocal microscopy allows selective imaging of the layers.