Point defects and their influence on electrical properties of reactive sputtered Cd₂SnO₄thin films

Abstract

Cd2SnO4 n-conducting thin films have been prepared by DC reactive sputtering from Cd-Sn alloy targets. The concentration of conduction electrons was varied over the range 7*1025-3*1026 m-3 by the post-deposition heat treatment as well as by the variation of the content of the target. Temperature dependence of carrier concentration and Hall mobility in the temperature range 77-380K show the films to be degenerate semiconductors. Oxygen vacancies and interstitial cadmium ions are the postulated charge defects. The existence of neutral defects was also taken into account.