Transformation steps of structure in flash-deposited films of a-InSe

Abstract

Conditions have been developed for the deposition of InSe semiconducting stoichiometric films using the flash evaporation technique. Structural identifications of the InSe films thus obtained have been determined using X-ray diffraction, and spectroscopic characterisations have been established by infrared and Raman scattering measurements. Optical absorption has been investigated over the range 0.8-1.5 eV. The crystallinity and morphology of films have been studied as a function of the starting material composition for which reproducible polycrystalline InSe films are found. The transformation steps of structure in flash-deposited films of a-InSe are consistent with the variation of vibrational measurements and with the changes of the absorption coefficient upon heat treatment.