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Characterization and Field‐Emission Properties of Needle‐like Zinc Oxide Nanowires Grown Vertically on Conductive Zinc Oxide Films
399
Citations
25
References
2003
Year
EngineeringField‐emission PropertiesOptoelectronic DevicesMetallic NanomaterialsLuminescence PropertySemiconductor NanostructuresHigh DensityElectronic DevicesAbstract Needle‐like ZnoNanostructure SynthesisNanoscale ScienceMaterials SciencePhotoluminescenceNanotechnologyOxide ElectronicsOptoelectronic MaterialsZno NanowiresNanomaterialsApplied PhysicsThin Films
Abstract Needle‐like ZnO nanowires with high density are grown uniformly and vertically over an entire Ga‐doped conductive ZnO film at 550 °C. The nanowires are grown preferentially in the c ‐axis direction. The X‐ray diffraction (XRD) θ‐scan curve shows a full width at half maximum (FWHM) value of 2°. This indicates that the c ‐axes of the nanorods are along the normal direction of the substrate surface. The investigation using high‐resolution transmission electron microscopy (HRTEM) confirmed that each nanowire is a single crystal. A room‐temperature photoluminescence (PL) spectrum of the wires consists of a strong and sharp UV emission band at 380 nm and a weak and broad green–yellow band. It reveals a low concentration of oxygen vacancies in the ZnO nanowires and their high optical quality. Field electron emission from the wires was also investigated. The turn‐on field for the ZnO nanowires was found to be about 18 V μm –1 at a current density of 0.01 μA cm –2 . The emission current density from the ZnO nanowires reached 0.1 mA cm –2 at a bias field of 24 V μm –1 .
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