Interfacial order in epitaxial NiSi2

Abstract

High-quality epitaxial NiSi2 films have been fabricated on 〈111〉 Si substrates and examined by grazing-angle Rutherford backscattering and channeling techniques. The channeled backscattering yields are close to single-crystal values and permit examination of the silicide-silicon interface. The yields indicate that the number of disordered Ni atoms at the interface must be less than 1.5×1015 Ni/cm2.