Applied Physics Letters · 2011 · 65 citations · 14 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsOptoelectronicsHigh-frequency Semiconductor DevicesImagingInterferometrySemiconductor DetectorsTerahertz PhotonicsTerahertz SpectroscopyDynamic RangeHeterodyne DetectionNoise Equivalent PowerReal-time ImagingTerahertz DetectionTerahertz DetectorsTerahertz ImagingTerahertz Semiconductor Devices
Room-temperature detection and imaging in transmission and reflection geometries at 0.591 THz with planar asymmetrically shaped InGaAs diodes (also called bow-tie diodes) are demonstrated in direct and heterodyne mode. The sensitivity of the diodes is found to be 6 V/W in direct mode, and the noise-equivalent power (NEP) in direct and heterodyne mode is estimated to be about 4 nW/Hz and 230 fW/Hz for a local-oscillator power of 11 μW, respectively. The improvement of the dynamic range by heterodyning over direct power detection amounts to about 20 dB using pixel read-out times relevant to real-time imaging conditions.
14