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Photoluminescence from ultrathin ZnSe/CdSe quantum wells
51
Citations
11
References
1993
Year
SemiconductorsIi-vi SemiconductorOptical MaterialsElectronic DevicesEngineeringPhysicsPhotoluminescenceCompound SemiconductorOptoelectronic MaterialsApplied PhysicsBright Excitonic LinesOptoelectronic DevicesMolecular Beam EpitaxyOptoelectronicsEnergetic PositionsSelf-limiting Monolayer EpitaxySemiconductor Nanostructures
Self-limiting monolayer epitaxy has been used to prepare ZnSe/CdSe quantum well structures containing 1–5 monolayers (≊3–15 Å) thick CdSe quantum wells. Photoluminescence spectra of these structures show bright excitonic lines with a blue shift of maximum 870 meV for the 1 monolayer wide quantum wells. Calculations for the energetic positions of the photoluminescence peaks are in good agreement with the experimental data. The full width at half maximum of the photoluminescence lines increases from about 25 meV for the 1 ML quantum wells to about 75 meV for the 3 ML quantum wells.
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