High Electron Mobility in Air for <i>N,N</i>′‐1<i>H</i>,1<i>H</i>‐Perfluorobutyldicyanoperylene Carboxydi‐imide Solution‐Crystallized Thin‐Film Transistors on Hydrophobic Surfaces

Abstract

High-mobility and air-stable n-type organic field transistors based on solution-crystallized N,N′-1H,1H-perfluoro­butyldicyanoperylene carboxydi-imide (PDIF- CN2) are developed. Electron mobility as high as 1.3 cm2 V−1 s−1 is achieved owing to the almost-perfect periodic crystal packing.