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Recombination and loss analysis in polythiophene based bulk heterojunction photodetectors
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2002
Year
Optical MaterialsEngineeringOrganic ElectronicsLoss AnalysisIllumination Intensity DependenceOptoelectronic DevicesPhotovoltaicsPeak MaximumSemiconductorsElectronic DevicesPhotodetectorsOptical PropertiesBulk Heterojunction PhotodetectorElectrical EngineeringPhotochemistryOptoelectronic MaterialsOrganic SemiconductorPhotoelectric MeasurementSemiconducting PolymerApplied PhysicsOptoelectronicsOptical DevicesSolar Cell Materials
The monochromatic external quantum efficiency of a bulk heterojunction photodetector based on a blend of poly-3(hexylthiophene) with a methanofullerene is reported to be as high as 76% at the peak maximum at 25 °C. Analysis of the temperature dependence, the illumination intensity dependence together with absorption measurements in reflection geometry, allow calculation of the internal quantum efficiency of the device close to 100% at the peak maximum. Recombination of photoinduced carriers is negligible or even absent in these photodetectors when operated in the photovoltaic mode. Optical losses in these bulk heterojunction devices are analyzed.
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