Electron-Ion Recombination Rate Coefficients for SI i, SI ii, S ii, S iii, C ii, and C-like Ions C i, N ii, O iii, F iv, NE v, NA vi, MG vii, AL viii, SI ix, and S XI

Abstract

A new unified treatment for electron-ion recombination is employed to obtain recombination rate coefficients for silicon, sulfur, and carbon ions of importance in the study of the interstellar medium and H II regions in general. Improved and extended results are also presented for ions in the carbon isoelectronic sequence. Recombination rate coefficients are tabulated at a wide range of temperatures, from 10<SUP>1</SUP> to l0<SUP>9</SUP> K. These rates correspond to total electron-ion recombination incorporating both the radiative and dielectronic recombination processes calculated in an ab initio manner.