Applied Physics Letters · 1999 · 24 citations · 11 references
Optical MaterialsEngineeringCrystal Growth TechnologyGrain SizeIi-vi SemiconductorPolycrystalline Cdte FilmsMicrostructure-strength RelationshipThin Film ProcessingMaterials SciencePhysicsStructural EvidenceCrystal MaterialX-ray Diffraction PeakSolid MechanicsGrain-boundary InfluenceDefect FormationLinear BehaviorNanocrystalline MaterialCrystallographyMicrostructureMaterial AnalysisX-ray DiffractionCondensed Matter PhysicsApplied PhysicsThin Films
We report the linear behavior of the band-tail parameter as a function of the reciprocal of the grain size in polycrystalline CdTe. On the other hand, the study of the full width at half maximum of the x-ray diffraction peak shows a similar behavior, which indicates that the disorder increases as grain size diminishes. A theoretical analysis justifies that the behavior is ruled by the contribution of the grain-boundary traps, and the trap concentration is calculated. Both results constitute experimental evidences of the grain-boundary disorder, which was quantified, and demonstrate that it is caused by the extension of the grain-boundary effect into the grain.
11