Philosophical magazine · 1968 · 26 citations · 21 references
Materials ScienceEngineeringDislocation InteractionCrystalline DefectsPhysicsApplied PhysicsCondensed Matter PhysicsAtomic PhysicsDefect FormationIon BeamField-ion MicrographsIon EmissionMixed DislocationDefect ToleranceMicrostructureImpurity SegregationStacking-fault Energy
Abstract It is shown how the images of stacking faults in b.c.c. metals can be analysed in field-ion micrographs. The method of analysis is applied to some observations in tungsten. A mixed dislocation lying close to the [142] direction and with Burgers vector a/2[11·1] is shown to have dissociated twice. The dislocation dissociated on {110} planes in accord with either the dissociation proposed by Cohen–Crussard or that proposed by Wasilewski–Foxall. A tentative value for the stacking-fault energy of tungsten of γ≃50 ergs cm−2 is obtained, in the suspected presence of some impurity segregation.
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Electron Microscopy of Thin Crystals
Nature · 1963 · 4K citations
Electron microscopy of thin crystals
M.E. Haine · Vacuum · 1966 · 2.4K citations