Enhancement of Radiative Recombination in Silicon via Phonon Localization and Selection‐Rule Breaking

Abstract

Enhanced radiative recombination in a periodically nanoengineered silicon- on-insulator structure (see figure and cover) is studied using micro-Raman, photoluminescence, and photocurrent spectroscopies. It is shown that the enhancement is due to phonon- localization effects, leading to a relaxation of the fundamental k-selection rule disfavoring light emission in bulk silicon.