Publication | Closed Access
Detection of Ga vacancies in electron irradiated GaAs by positrons
73
Citations
8
References
1986
Year
EngineeringRadiation DetectionPhysicsElectron SpectroscopyPositron Annihilation SpectroscopyApplied PhysicsGa VacanciesPositron Lifetime MeasurementsSynchrotron RadiationMicroelectronicsOptoelectronicsParticle AcceleratorElectron OpticGa Sublattices
Positron lifetime measurements have been used to study the recovery of electron irradiated GaAs between 77 and 800 K. Below room temperature positrons are trapped by vacancies in Ga sublattices. The Ga vacancies recover between 200 and 350 K.
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