Publication | Open Access
A densely packed monolithic linear array of GaAs-Al<i>x</i>Ga1−<i>x</i>As strip buried heterostructure laser
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Citations
4
References
1979
Year
EngineeringLaser ScienceLaser ApplicationsLaser PhysicsLaser MaterialSuper-intense LasersHigh-power LasersLaser ControlNeighboring LasersRf SemiconductorSemiconductor LasersHeterostructure LasersCompound SemiconductorPhotonicsLaser Processing TechnologyLaser DesignCategoryiii-v SemiconductorAdvanced Laser ProcessingEntire ArrayApplied PhysicsLaser SafetyHeterostructure LaserOptoelectronicsLaser Damage
Strip buried heterostructure lasers were formed with a center-to-center spacing of 15 μm to give a densely packed monolithic linear array. Excellent uniformity in individual laser characteristics persisted across the entire array. The laser output power-current characteristics of such arrays were linear and symmetric from both mirrors for the entire injection current range up to catastrophic damage. Pulsed-out power of ∼1.6 W/mirror has been obtained for a five-laser array. Spectral behavior of the arrays indicated that there was some field interaction between the neighboring lasers.
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