Surface-emitting laser diode with distributed Bragg reflector and buried heterostructure

Abstract

A surface-emitting laser diode (SELD) with distributed Bragg reflector (DBR) and buried heterostructure (BH) is fabricated by the metalorganic chemical vapour deposition (MOCVD), reactive ion beam etching (RIBE) and liquid phase epitaxial(LPE) regrowth techniques. An Al0.1 Ga0.9As/Al0.7Ga0.3As multilayer is employed for the lower reflector. The active region is embedded with Al0.4Ga0.6As current blocking layers. The threshold current is 28 mA, and the spectral width is 2.5 Å. A 2 × 2 array is also demonstrated.