Transforming a surface state of a topological insulator by a Bi capping layer

Abstract

We introduce a distinct approach to engineer a topologically protected surface state of a topological insulator. By covering the surface of a topological insulator, ${\mathrm{Bi}}_{2}{\mathrm{Te}}_{2}\mathrm{Se}$, with a Bi monolayer film, the original surface state is completely removed and three new spin helical surface states, originating from the Bi film, emerge with different dispersion and spin polarization, through a strong electron hybridization. These new states play the role of topological surface states keeping the bulk topological nature intact. This mechanism provides a way to create various different types of topologically protected electron channels on top of a single topological insulator, possibly with tailored properties for various applications.