Semitransparent silicide electrodes utilizing interaction between hydrogenated amorphous silicon and metals

Abstract

Thin silicide layers are found to be formed through solid state reaction between hydrogenated amorphous silicon (a-Si:H) and metals. The method of formation of the silicide layer is very simple: deposition of metal, annealing, and etching of the residual metal layer. The reaction kinetics and properties of this layer are described. The thickness of this silicide layer is estimated to be less than 100 Å. Accordingly, it can be used as the semitransparent electrode in a-Si:H photodiodes. This layer is more chemically stable than such conventional transparent semiconductive oxides as indium tin oxide (ITO). Photodiodes using this semitransparent electrode have as good optical and electrical characteristics as conventional a-Si:H photodiodes using ITO.