Raman Scattering Resonant with Quasi-Two-Dimensional Excitons in Semiconductor Quantum Wells

Abstract

Raman scattering resonant with quasi-two-dimensional excitons in GaAs-$({\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x})\mathrm{As}$ heterostructures shows enhancement profiles in agreement with exciton structure measured in other optical spectra. The profiles have characteristic asymmetries in the incoming and outgoing resonances that are specific to the exciton-optical-phonon interaction in quantum wells. Direct evidence of the degree of exciton confinement appears in the Raman spectra.