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Transient Optical Spectra of a Dense Exciton Gas in a Direct-Gap Semiconductor
173
Citations
6
References
1982
Year
Charge ExcitationsEngineeringLocalized Excited StateExciton ResonanceExcitation Energy TransferRemarkable PersistenceElectronic Excited StateSemiconductorsDense Exciton GasOptical PropertiesQuantum MaterialsDirect-gap SemiconductorOptical SpectroscopyPhotonicsQuantum SciencePhotoluminescencePhysicsExcited State PropertyTransient Optical SpectraApplied PhysicsOptoelectronics
The observation is reported of a remarkable persistence of the $1s$ exciton resonance in transient picosecond absorption spectra of GaAs under conditions of resonant optical excitation up to pair densities two orders of magnitude above the Mott density. The stability (excess linewidth 0.8 meV at $n=6\ifmmode\times\else\texttimes\fi{}{10}^{16}$ ${\mathrm{cm}}^{\ensuremath{-}3}$) of this dense exciton gas against decay into the energetically more favorable continuum of electron-hole pairs is due to the relatively weak self-screening of discrete excitons.
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