High-temperature strength of dispersion-hardened single crystals: I. Experimental results

Abstract

Abstract The yield stress of copper crystals containing a dispersion of SiO2 particles was measured as a function of temperature (20°-1050°C), strain rate, and volume fraction and diameter of the SiO2 particles. The ratio of the modulus-corrected yield stress at temperatures from 20° to 1050°C, to that at 20°C, was found to be strongly temperature-dependent above about 400°C. But the modulus-corrected yield stress at 1050°C was still about half the value at 20°C. Between 600° and 1000°C, the yield stress was found to vary logarithmically with the strain rate. The theoretical analysis of these results will be the subject of another paper.