Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition

Abstract

Silicon dioxide (SiO2) films prepared by plasma-enhanced atomic-layer deposition were successfully grown at temperatures of 100 to 250 °C, showing self-limiting characteristics. The growth rate decreases with an increasing deposition temperature. The relative dielectric constants of SiO2 films are ranged from 4.5 to 7.7 with the decrease of growth temperature. A SiO2 film grown at 250 °C exhibits a much lower leakage current than that grown at 100°C due to its high film density and the fact that it contains deeper electron traps.