Organosilicon deep UV positive resist consisting of poly(p-disilanylenephenylene)

Abstract

A new class of positive deep ultravoilet (UV) resists consisting of poly(p-disilanylenephenylene)s was developed, in which a disilanylene unit and a phenylene unit are connected alternatively in the polymer main chain. These resists had very high etching resistance against oxygen plasma. The lithographic applications of a double-layer resist system in which the poly(p-disilanylenephenylene) film was used as the top imaging layer were examined. As a result, very high resolution and high contrast were attained. The double-layer resist technique using organosilicon deep UV positive resist appears very promising for lithographic applications.