Carrier temperature and spectral holeburning dynamics in InGaAsP quantum well laser amplifiers

Abstract

An experimental and theoretical study of ultrafast gain dynamics in InGaAsP multiple quantum well laser amplifiers is presented. A transition from pump-induced heating of the carriers to pump-induced cooling is observed by change of the pump-probe wavelength. The experimental results are in good agreement with a theoretical model including the effects of carrier temperature dynamics, spectral holeburning, and two-photon absorption.