The influence of the exchange interaction on the E.S.R. linewidth in amorphous silicon

Abstract

Abstract The magnetic-field dependence of the E.S.R. linewidth in amorphous silicon has been measured in order to investigate the influence of the exchange interaction on the E.S.R. linewidth. A different field dependence was obtained for amorphous silicon prepared by the glow-discharge technique and by electron-beam evaporation. The experimental results are discussed in terms of exchange-coupled spins which are distributed either homogeneously or inhomogeneously. It is concluded that exchange interaction is necessary to account for a variety of experimental results obtained in these materials.