High bandwidth-efficiency resonant cavity enhanced Schottky photodiodes for 800–850 nm wavelength operation

Abstract

High-speed resonant cavity enhanced Schottky photodiodes operating in 800–850 nm wavelength region are demonstrated. The devices are fabricated in the AlGaAs/GaAs material system. The Schottky contact is a semitransparent Au film which also serves as the top reflector of the Fabry–Perot cavity. The detectors exhibit a peak quantum efficiency of η=0.5 at λ=827 nm wavelength and a 3 dB bandwidth of more than 50 GHz resulting in a bandwidth-efficiency product of more than 25 GHz.