2014 · 12 citations · 6 references
EngineeringElectrical EngineeringAnalog ElectronicsMicroelectronicsMicrowave EngineeringCmos Circuit DesignMicrowave AmplifiersMicrowave Integrated CircuitsMicrowave OscillatorsRadar SystemsRadio-frequency Integrated CircuitsConversion GainLeakageMixersNoise FigurePower OutputRadar Hardware ArchitectureRadio-frequency Integrated Circuit DesignShielding
This paper presents CMOS front-end ICs with 13.3 dBm output power for K-band FMCW radar, which is integrated in 0.13-μm CMOS technology. The transmitter consists of a voltage controlled oscillator, divider chain, power amplifier, and additional buffers. The receiver consists of a low-noise amplifier, IQ mixers, an IQ generator, and buffers. The leakage problem can be mitigated by adopting differential topology and ground shielding. As a result, the receiver achieves a conversion gain of 35.7 dB, a P1dB of -31.6 dBm, and a DSB noise figure of 5.5 dB. The transmitter achieves the tuning range of 23.8~24.5 GHz and the phase noise of -104 dBc/Hz @ 1MHz offset. The receiver and transmitter chips consume 121.5 mW and 373.5 mW from a 1.5 V power supply, respectively. Using these two chips, the K-band FMCW radar module is implemented and verified by measuring the distance of an object.
6
Shuenn-Fuh Lee, J. K. Choi · Electronics Letters · 2000 · 178 citations
A single-chip 24 GHz SiGe BiCMOS transceiver for FMCW automotive radars
Dave Saunders, S.D. Bingham, Gaurav Menon et al. · 2009 · 33 citations
Engineering, Automotive Engineering, Electrical Engineering +17
24 GHz CMOS transceiver with novel T/R switching concept for indoor localization
Amin Hamidian, Randolf Ebelt, Denys Shmakov et al. · 2013 · 13 citations