S-passivated InP (100)-(1×1) surface prepared by a wet chemical process

Abstract

A highly stable crystalline S-passivated InP(100) surface has been obtained by a simple wet chemical process, using illumination and heated (NH4)2S solution. Low-energy electron diffraction studies show a (1×1) diffraction pattern, which persists even after 3 days of exposure to the atmosphere. High-resolution photoemission studies show that the surface is terminated with a monolayer of sulfur, which forms bridge bonds only to indium. The P 2p core level is identical to that of a vacuum-cleaved InP surface. A possible structural model is presented.