Modification of EEHEMT1 Model for Accurate Description of GaN HEMT Output Characteristics

Abstract

GaN HEMTs are promising power devices for RF and microwave power applications. However, the performance of devices can be compromised under some operating conditions by charge carrier trapping. From the device development point of view, device optimization is necessary to obtain the best possible performance. For device modeling and design purposes, the device needs to be characterized and modeled accurately in order to foresee how the device behaves under realistic operating conditions. The prediction of the device performance is also significant for the decision, whether the device is able to satisfy the requirements of the application of interest. In this paper, a modified EEHEMT1 model describing GaN HEMTs, which is capable to describe the knee region of the device's output characteristic more accurate than before, will be introduced.