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Structural and electrical properties of epitaxial Bi<sub>2</sub>Se<sub>3</sub> thin films grown by hybrid physical-chemical vapor deposition
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2012
Year
Thin Film PhysicsEngineeringThin Film Process TechnologyElectrical PropertiesJoan M. RedwingJarod C. GagnonQuantum MaterialsMolecular Beam EpitaxyEpitaxial GrowthThin Film ProcessingMaterials EngineeringMaterials ScienceElectrical EngineeringPhysicsMaterial AnalysisElectronic MaterialsNatural SciencesSurface ScienceApplied PhysicsCondensed Matter PhysicsThin FilmsChemical Vapor Deposition
Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation Joseph E. Brom, Yue Ke, Renzhong Du, Dongjin Won, Xiaojun Weng, Kalissa Andre, Jarod C. Gagnon, Suzanne E. Mohney, Qi Li, Ke Chen, X. X. Xi, Joan M. Redwing; Structural and electrical properties of epitaxial Bi2Se3 thin films grown by hybrid physical-chemical vapor deposition. Appl. Phys. Lett. 16 April 2012; 100 (16): 162110. https://doi.org/10.1063/1.4704680 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioApplied Physics Letters Search Advanced Search |Citation Search
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