Growth of InN on GaAs Substrates by the Reactive Evaporation Method

Abstract

InN films are epitaxially grown on GaAs substrates at 450°C by a rf-excited reactive evaporation method. The epitaxial relationship of (0001)InN//(111)GaAs is confirmed from transmission electron diffraction and X-ray diffraction measurements. The value of a full width at half-maximum of the double-crystal X-ray rocking curve for the (0002) diffraction is 17s. Surface morphologies of the InN films are also investigated by scanning electron microscopy.