ASi-Sii-defect Model of Light-induced Degradation in Silicon

Abstract

The observation of light-induced degradation (LID) in indium-doped silicon has led to the idea of an ASi-Sii-defect responsible for LID. Generation of silicon self interstitials (Sii) leads, in consequence of the ASi-Sii-defect model, to an enhancement or activation of LID, respectively. This was observed several decades ago at the beginning of solar cell investigation for space application. Boron-doped float-zone (FZ) silicon solar cells show LID after electron irradiation, gallium-doped FZ solar cells do not. The literature data is summarized and interpreted in view of the ASi-Sii-defect model.