Dispersive Transport and Recombination Lifetime in Phosphorus-Doped Hydrogenated Amorphous Silicon

Abstract

The recombination lifetime in phosphorus-doped hydrogenated amorphous silicon is determined from the dispersive photocurrent decay following a short-pulse excitation. The electron drift mobility and dispersion parameter $\ensuremath{\alpha}$ are obtained as well. It is found that $\ensuremath{\alpha}$ is temperature dependent as expected for extended-state transport controlled by multiple trapping. A lower limit to the extended-state mobility is determined: ${\ensuremath{\mu}}_{c}>~1$ ${\mathrm{cm}}^{2}$/V.s.