Characterization of amorphous Si-Zn-Sn-O thin films and applications in thin-film transistors

Abstract

Amorphous silicon-zinc-tin-oxide (α-SZTO) thin films were prepared, and their properties were investigated physically and electrically, with an emphasis on the Si effects. An appropriate Si content in the matrix can not only achieve stable and dense films, but also suppress the formation of oxygen vacancies efficiently, due to its high oxygen bonding ability. Thin film transistors (TFTs) with α-SZTO active channel layers exhibited a field-effect mobility of around 1 cm2V−1s−1, an on/off current ratio of 107, and a subthreshold swing of 0.863 V/decade with a good long-term stability. The α-SZTO TFT is a potential candidate for electronic applications.