Nanostructured VO2 film with high transparency and enhanced switching ratio in THz range

Abstract

We investigated the terahertz (THz) transmission characteristics of semiconductor VO2 film and its THz suppression behavior after the phase transition. The VO2 films were deposited by the sol-gel method, and an in situ growth with surface nanocrystallization occurring in the films with increasing thickness was presented. Morphology-induced percolation leads to high THz transparency in the semiconductor VO2 film, and the more compact nanostructure could account for the enhanced THz switching ratio in the metallic film. These results may offer insights into the artificial design of VO2 films for THz device applications.