Reaction‐Bonded Boron Carbide/Magnesium–Silicon Composites

Abstract

Reaction‐bonded boron carbide was manufactured by infiltrating porous boron carbide preforms at 1273 K with a Mg‐Si eutectic alloy. The resulting composite material consists, in addition to the original B 4 C, of SiC, Mg 2 Si, and a Mg‐rich complex boride/carbide Mg x (Al,Si) y (B,C) z phase. The composites display high hardness (1700 HV), Young's modulus (356 MPa) and a moderate bending strength (230 MPa). The ballistic efficiency (of about 6.7), as determined by the depth of penetration method, is much higher than that of alumina and similar to that of silicon‐infiltrated reaction‐bonded composites.