Physical Review Letters · 1995 · 141 citations · 15 references
Natural SciencesPhysicsCondensed Matter PhysicsSemiconductor MaterialsSolid State PhysicsAtomic ExcitationElectronic Excited StatesQuantum DotsQuantum OptoelectronicsQuantum WellsSemiconductor PhysicsBiexciton StatesExcitationExciton LocalizationExciton PhysicsExciton StatesExcitonsStimulated Emission
On high-quality ZnCdSe/ZnSe quantum wells the occurrence of a new emission feature energetically below the exciton transition is demonstrated from which stimulated emission and gain emerge at elevated excitation levels (10 kW/ ${\mathrm{cm}}^{2}$). Application of a magnetic field allows us to distinguish this feature from bound excitons and evidence its biexciton nature. Subpicosecond excite-and-probe measurements reveal the scenario of exciton-exciton interaction in the presence of alloy disorder (localization). A model accounting for bound and antibound two-exciton states provides good agreement with the experimental data.
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Optical properties of highly excited direct gap semiconductors
C. Klingshirn, H. Haug · Physics Reports · 1981 · 545 citations