Publication | Open Access
Terahertz detection with tunneling quantum dot intersublevel photodetector
76
Citations
19
References
2006
Year
Categoryquantum ElectronicsThz PhotonicsTerahertz TechnologyEngineeringTerahertz PhotonicsTunnel QuantumSemiconductorsTerahertz Material PropertiesPhotodetectorsQuantum DotsPhotonicsElectrical EngineeringTerahertz SpectroscopyPhysicsTerahertz DetectionTerahertz NetworkTerahertz ScienceTerahertz DevicesApplied PhysicsTerahertz TechniqueTailored Electronic PropertiesTerahertz RadiationOptoelectronics
The characteristics of a tunnel quantum dot intersublevel photodetector, designed for the absorption of terahertz radiation, are described. The absorption region consists of self-organized In0.6Al0.4As∕GaAs quantum dots with tailored electronic properties. Devices exhibit spectral response from 20to75μm (∼4THz) with peak at ∼50μm. The peak responsivity and specific detectivity of the device are 0.45A∕W and 108cmHz1∕2∕W, respectively, at 4.6K for an applied bias of 1V. Response to terahertz radiation is observed up to 150K.
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