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Structural Phase Transitions and Semiconductor-Metal Transition in WO<sub>3</sub>
41
Citations
13
References
1980
Year
SemiconductorsMaterials ScienceWo 3Ii-vi SemiconductorSame Crystal StructureEngineeringPhysicsTransition Metal ChalcogenidesApplied PhysicsCondensed Matter PhysicsQuantum MaterialsSemiconductor MaterialStructural Phase TransitionsTopological HeterostructuresSolid-state PhysicResistivity Discontinuities
Semiconducting WO 3 with the donor electrons trapped in oxygen vacancies shows so-called `semiconductor-metal transition' at the triclinic-monoclinic (I) phase transition temperature at about 17°C. Resistivity discontinuities as large as a factor 10 2 have been observed at the monoclinic: (II)-triclinic phase transition at about -40°C. The semiconductor-metal transition is interpreted by the consideration that the energy gap between the t 2 g orbitals of 5 d 1 conduction electrons and the donor level are enlarged by the crystalline distortions due to the condensations of the soft phonon modes. The resistivity discontinuities are interpreted as due to the different energy gaps in the monoclinic (II) and triclinic phases. The essential difference between WO 3 and ReO 3 having the same crystal structure is discussed.
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