Extremely high thermal conductivity of graphene: Prospects for thermal management applications in nanoelectronic circuits

TLDR

Graphene’s thermal conductivity was studied in suspended flakes on Si/SiO₂ wafers. The authors used a non‑contact micro‑Raman spectroscopy technique that inferred power dissipation and temperature rise from the G‑mode spectral position and intensity. The measured conductivity ranged from ~3080 to 5150 W m⁻¹ K⁻¹ with a phonon mean free path of ~775 nm near room temperature, underscoring graphene’s potential for thermal management in nanoelectronic circuits.

Abstract

The authors reported on investigation of the thermal conductivity of graphene suspended across trenches in Si∕SiO2 wafer. The measurements were performed using a noncontact technique based on micro-Raman spectroscopy. The amount of power dissipated in graphene and corresponding temperature rise were determined from the spectral position and integrated intensity of graphene’s G mode. The extremely high thermal conductivity in the range of ∼3080–5150W∕mK and phonon mean free path of ∼775nm near room temperature were extracted for a set of graphene flakes. The obtained results suggest graphene’s applications as thermal management material in future nanoelectronic circuits.