Effect of bias on neutron detection in thin semiconducting boron carbide films

Abstract

Neutron detection signatures in thin films of semiconducting boron carbide were measured as a function of three applied reverse bias voltages, 0, 1.57 V and 3.15 V. Thermal neutrons were detected at zero bias. As the bias was increased, an increase in efficiency and in peak channel positions was observed. These two significant effects have been attributed to an increase in charge collection at higher bias voltages.