Gain Spectrum of an e–h Liquid in Direct Gap Semiconductors

Abstract

Abstract The gain spectrum of a degenerate electron–hole plasma for direct gap semiconductors is calculated as a function of the density and the temperature of the electronic excitations. The calculation contains the collision broadening in the single‐particle self‐energies and the excitonic enhancement due to the attractive electron–hole interaction in the plasma. For the example of GaAs the numerically calculated spectrum is shown to fit the experimentally determined spectrum.