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The Electronic Contribution to the Elastic Properties of Germanium
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1961
Year
Materials ScienceSemiconductorsEngineeringPhysicsCrystalline DefectsNatural SciencesSeveral Elastic EffectsCondensed Matter PhysicsQuantum MaterialsApplied PhysicsStrain Energy FunctionMaterial PhysicDegenerate N-type GermaniumQuantum ChemistryElectronic ContributionElectronic StructureSolid-state PhysicGermanene
Theories of several elastic effects resulting from the contribution of electrons to the strain energy function of germanium are presented. They show that the elastic properties are appreciably changed by doping with donor and acceptor impurities. The properties considered are: (1) volume, (2) elastic constants of degenerate n-type material, (3) third-order elastic constants of degenerate n-type material, (4) elastic constants of degenerate p-type material, (5) elastic constants of material containing electrons bound to donors, (6) elastic constants of material containing electrons bound to pairs of donor atoms. The most striking effect is found for the case of degenerate n-type germanium, in which the theory predicts that c <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">44</inf> can be lowered by 8% with attainable doping levels.